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Brown, B: Lithography For Artists - A Complete ...
45,19 € *
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Erscheinungsdatum: 04.11.2008, Medium: Buch, Einband: Gebunden, Titel: Lithography For Artists - A Complete Account Of How To Grind, Draw Upon, Etch, And Print From The Stone, Autor: Brown, Bolton, Verlag: Redgrove Press, Sprache: Englisch, Schlagworte: ART // General, Rubrik: Kunst, Seiten: 136, Informationen: HC gerader Rücken kaschiert, Gewicht: 314 gr, Verkäufer: averdo

Anbieter: averdo
Stand: 15.07.2020
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Lithography for Artists - A Complete Account of...
33,99 € *
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Lithography for Artists - A Complete Account of How to Grind Draw Upon Etch and Print from the Stone ab 33.99 € als Taschenbuch: . Aus dem Bereich: Bücher, English, International, Englische Taschenbücher,

Anbieter: hugendubel
Stand: 15.07.2020
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Lithography For Artists - A Complete Account Of...
39,49 € *
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Lithography For Artists - A Complete Account Of How To Grind Draw Upon Etch And Print From The Stone ab 39.49 € als gebundene Ausgabe: . Aus dem Bereich: Bücher, Kunst & Musik,

Anbieter: hugendubel
Stand: 15.07.2020
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Lithography For Artists - A Complete Account Of...
39,99 € *
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Lithography For Artists - A Complete Account Of How To Grind Draw Upon Etch And Print From The Stone ab 39.99 EURO

Anbieter: ebook.de
Stand: 15.07.2020
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Air Gap Structures for Advanced Metallization S...
59,00 € *
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The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated, air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials.

Anbieter: Dodax
Stand: 15.07.2020
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Air Gap Structures for Advanced Metallization S...
101,00 CHF *
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The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials.

Anbieter: Orell Fuessli CH
Stand: 15.07.2020
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Air Gap Structures for Advanced Metallization S...
53,99 € *
ggf. zzgl. Versand

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials.

Anbieter: Thalia AT
Stand: 15.07.2020
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