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Brown, B: Lithography For Artists - A Complete ...
45,59 € *
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Erscheinungsdatum: 04.11.2008, Medium: Buch, Einband: Gebunden, Titel: Lithography For Artists - A Complete Account Of How To Grind, Draw Upon, Etch, And Print From The Stone, Autor: Brown, Bolton, Verlag: Redgrove Press, Sprache: Englisch, Schlagworte: ART // General, Rubrik: Kunst, Seiten: 136, Informationen: HC gerader Rücken kaschiert, Gewicht: 314 gr, Verkäufer: averdo

Anbieter: averdo
Stand: 29.05.2020
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Lithography for Artists - A Complete Account of...
32,99 € *
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Lithography for Artists - A Complete Account of How to Grind Draw Upon Etch and Print from the Stone ab 32.99 € als Taschenbuch: . Aus dem Bereich: Bücher, English, International, Englische Taschenbücher,

Anbieter: hugendubel
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Lithography For Artists - A Complete Account Of...
39,49 € *
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Lithography For Artists - A Complete Account Of How To Grind Draw Upon Etch And Print From The Stone ab 39.49 € als gebundene Ausgabe: . Aus dem Bereich: Bücher, Kunst & Musik,

Anbieter: hugendubel
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Lithography For Artists - A Complete Account Of...
39,49 € *
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Lithography For Artists - A Complete Account Of How To Grind Draw Upon Etch And Print From The Stone ab 39.49 EURO

Anbieter: ebook.de
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Reactive-ion Etching
34,00 € *
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Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Reactive ion etching (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber, which is usually grounded. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process, for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few millitorr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice.

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Stand: 29.05.2020
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